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Bienvenue dans la collection HAL du groupe CS : Convertisseurs Statiques
Nos activités de recherche couvrent les problématiques principales de la conversion d’énergie électrique et reposent sur la combinaison d’approches théoriques et expérimentales autour de la notion de cellule de commutation.
Le groupe s’est spécialisé dans l’étude de nouvelles structures de convertisseurs multicellulaires de moyenne et de forte puissance (du kW au MW) mettant en jeu des agencements originaux des cellules de commutation imbriquées séries, superposées parallèles et la parallélisation globale ou partielle par des dispositifs innovants de couplages magnétiques.
Types de documents publiés
Sujets
Dielectric Barrier Discharge
Short-Circuit
Intercell transformers
Short-circuit
Switches
Switching losses
Capacitors
Static converter
Silicon compounds
Reliability
SiC MOSFET
DC-DC power converters
Robustness
Choppers circuits
Substations
IGBT
Gate Driver
Switching frequency
Design
Bridge circuits
Efficiency
InterCell Transformer ICT
Elemental semiconductors
HEMT GaN
Wide bandgap semiconductors
Wide band gap semiconductors
Rail transportation power systems
Renewable energy
Railways
Voltage control
Gate driver
Gate-Damage
Ageing
Detection
Coupled inductors
Power convertors
Protection
Power Converter Design
DBD
Multilevel converters
Buck converter
Medium voltage
Silicon Carbide SiC
Ultra Violet Generation UV
Harmonic interactions
Excimer Lamp
Power Electronics
Electric Discharge Power Supply
Zero voltage switching
Inverter
Active Gate Driver
Power converter
Power Converters
Optimization
Decentralized control
Thyristor
Railway electrification
Gate-Aging
Modelling
SiC MOSFETs
Trapping
MOSFET SiC
Power integration
Electronique de puissance
Switching convertors
Power electronics
Busbars
Power MOSFET
Hydrogen
Gate-Driver
Silicon carbide
Skin effect
Distributed control
Driver circuits
Monolithic integration
CMOS
MOSFET circuits
DC-DC power convertors
Photovoltaic hybrid system
Self-switching
Power conversion
Court-circuit
Optimisation
Electrolyzer
Failure-Mode
SiC Mosfet
Insulated gate bipolar transistors
GaN
Rail transportation
Multilevel converter
Fuel cells
Traction
Diamond
Silicon
Fault tolerance
Device simulation
Traction power supplies
Fuel cell
Interleaved converters
MOSFET
Derniers dépôts
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Vanessa Smet, François Forest, Jean-Jacques Huselstein, Amgad Rashed, Frédéric Richardeau. Evaluation of Vce Monitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling. IEEE Transactions on Industrial Electronics, 2013, 60 (7), pp.2760-2770. ⟨10.1109/TIE.2012.2196894⟩. ⟨hal-01629235⟩
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Lucien Ghizzo, Gérald Guibaud, Christophe de Nardi, François Jamin, Vanessa Chazal, et al.. Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress. Journal of Failure Analysis and Prevention, 2024, 24 (5), pp.2221-2231. ⟨10.1007/s11668-024-02038-x⟩. ⟨hal-04752825⟩