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H. von Bardeleben, Jean-Louis Cantin, A. Parisini, A. Bosio, R. Fornari. Conduction mechanism and shallow donor properties in silicon-doped ɛ -G a 2 O 3 thin films: An electron paramagnetic resonance study. Physical Review Materials, 2019, 3 (8), pp.084601. ⟨10.1103/PhysRevMaterials.3.084601⟩. ⟨hal-03924960⟩
Dépôts en texte intégral
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Mots clés
AFM
6855Jk
7630Lh
18O resonance
17Opp
18O
Ion implantation
Nuclear reaction analysis
Nickel
Nuclear resonance profiling NRP
Evaluation
Transparent conductive oxide TCO
Ferromagnetic resonance
Aluminum
Zinc oxide
Adsorbed layers
RBS
ADSORPTION DESORPTION HYSTERESIS
Magnetization curves
Stable isotopic tracing
Nanostructures
Interface defects
3C-SiC
Rutherford backscattering spectrometry RBS
Nanoparticles
Thin film
7550Pp
Oxidation
SiC
Photoluminescence
Pulsed laser deposition
GaMnAs
Multilayer
Magnetic anisotropy
Epitaxial growth
Silicon
15N
Density functional theory
ALD
Sputtering
Defects
8140Ef
7550Ee
Adsorption Isotherms
Channeling
Charge exchange
AC susceptibility
Atomic Layer Deposition ALD
Growth
Indium oxide
Acoustic propreties of solid
Pb centers
Oxygen deficiency
27Alda
Topological defects
XPS
Low energy electron diffraction LEED
Periodic multilayer
Energy loss
EPR
27Aldp
Measurement
17Op
Silicon carbide
Kossel diffraction
NRP
17O
Isotopic Tracing
Ageing
Silicon Carbide
Diffusion
X-ray diffraction
Adsorption
Silica
Al2O3
Alloys
Topological insulators
Aluminium
Auger electron spectroscopy AES
Capillary condensation
2H
XRD
Ion beam analysis
Nitridation
Gold
13C
HfO2
Thin films
Gallium oxide
Metal-insulator transition
Epitaxy
Raman spectroscopy
27Ald p&α
NRA
Passivation
Acoustic
PIXE
Magnetic semiconductors
Hysteresis
Annealing